Details

Autor(en) / Beteiligte

• Wang, Wenhao
• He, Gang
• Wang, Leini
• Xu, Xiaofen
• Zhang, Yongchun

Titel

Solution-Driven HfLaOx-Based Gate Dielectrics for Thin Film Transistors and Unipolar Inverters

Ist Teil von

• IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4437-4443

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2021

Link zum Volltext

• IEEE_Xplore

Quelle

IEL

Beschreibungen/Notizen

• In this article, the preparation of HfLaO x gate dielectric thin films by the spin coating method is proposed. The in-depth physical properties of the as-prepared HfLaO x films were investigated as functions of annealing temperatures. Decided by the key performance indicators of current density, smooth surface, and areal capacitance of HfLaO x films with different annealing temperatures, optimized performance parameters with annealing temperature 550 °C have been obtained. To verify the feasibility of HfLaO x films as dielectric material, In 2 O 3 /HfLaO x thin-film transistors (TFTs) have been fabricated and device characterizations have been carried out. As a result, it has been detected that the In 2 O 3 /HfLaO x TFTs with optimized annealing temperature of 300 °C demonstrate superior electrical performance, including a high <inline-formula> <tex-math notation="LaTeX">{I}_{ \mathrm{\scriptscriptstyle ON}} / {I}_{ \mathrm{\scriptscriptstyle OFF}} </tex-math></inline-formula> of ~10 6 , a high <inline-formula> <tex-math notation="LaTeX">\mu _{\text {FE}} </tex-math></inline-formula> of 17.09 cm 2 V −1 s −1 , a low <inline-formula> <tex-math notation="LaTeX">{V}_{\text {TH}} </tex-math></inline-formula> of 0.09 V, a small interfacial trap states (<inline-formula> <tex-math notation="LaTeX">{D}_{\text {it}} </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">1.94\times 10^{{12}} </tex-math></inline-formula> cm −2 , and a small threshold voltage shift of 0.23 V under PBS test and 0.11 V under NBS test after 3600 s bias stress, respectively. To confirm TFTs' potential applications in logic circuits, a resistor-loaded inverter was integrated and the maximum voltage gain of 7.60 was demonstrated at an ultra-low operating voltage of 2.5 V. Current observations have indicated the great application prospects of solution-derived HfLaO x -gated TFTs in low-cost and excellent performance electronic devices.