Details

Autor(en) / Beteiligte

• Wei, Guoshuai
• Hao, Ruiting
• Li, Xiaoming
• Wang, Yunpeng
• Fang, Shuiliu
• Guo, Jie
• Ma, Xiaole
• Ren, Yang
• Li, Junbin
• Kong, JinCheng
• Wang, Guowei
• Xu, Yingqiang
• Wu, Donghai
• Niu, Zhichuan

Titel

Performance and electron radiation damage of InAs/GaSb long-wave infrared detectors based on PπMN design

Ist Teil von

• Journal of applied physics, 2021-08, Vol.130 (7)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2021

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• We fabricated a high-performance InAs/GaSb type-II superlattice infrared detector. The tolerance of various sizes of detector irradiated with 1-MeV electrons was characterized. X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) measurements demonstrated the high quality of the materials. The response spectrum had a 50% cutoff wavelength of 8.85 μm. Irradiation with 1-MeV electrons caused a significant increase in the dark current density from 2.54 × 10−3 to 2.58 × 10−1 A/cm2 at Vb = –0.03 V. The 1-MeV electron irradiation mainly caused displacements in the device, which had a significant impact on the generation-recombination dark current and surface leakage current.