Details

Autor(en) / Beteiligte

• Bai, Zhi-Chen
• Liu, Xin
• Ding, Jing
• Cui, Hai-Lin
• Su, Bo
• Zhang, Cun-Lin

Titel

Terahertz generation and detection of 1550-nm-excited LT-GaAs photoconductive antennas

Ist Teil von

• Journal of modern optics, 2021-09, Vol.68 (15), p.824-829

Ort / Verlag

Abingdon: Taylor & Francis

Erscheinungsjahr

2021

Quelle

Taylor & Francis Journals Auto-Holdings Collection

Beschreibungen/Notizen

• Terahertz generation and detection is the key means to explore terahertz spectrum, one of which is the application of photoconductive antenna. In this study, a low-temperature gallium arsenide (LT-GaAs) epitaxial wafer antenna and an LT-GaAs thin-film antenna were fabricated. The LT-GaAs epitaxial wafer antenna was fabricated using an epitaxial wafer composed of LT-GaAs, AlAs,GaAs, and semi-insulating GaAs. An LT-GaAs thin film was obtained by etching the AlAs layer in the epitaxial wafer and then transferring it to a clean silicon wafer to fabricate the LT-GaAs thin-film antenna. The LT-GaAs epitaxial wafer and thin-film antennas were used as the generation and detection antennas, respectively. The two antennas were directly aligned at a distance of 2 mm from each other and placed into a self-made measurement system for detection. A THz spectrum of approximately 2.5 THz was obtained under 1550-nm laser excitation, thus verifying the antenna performance.