Details

Autor(en) / Beteiligte

• Yue, Dewu
• Guo, Songbo
• Han, Shun
• Cao, Peijiang
• Zeng, Yuxiang
• Xu, Wangying
• Fang, Ming
• Liu, Wenjun
• Zhu, Deliang
• Lu, Youming
• Qian, Yongteng

Titel

Facile fabrication of MgZnO/ZnO composites for high performance thin film transistor

Ist Teil von

• Journal of alloys and compounds, 2021-08, Vol.873, p.159840, Article 159840

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The disadvantages of the low on/off current ratio (Ion/off) and high leakage current in ZnO-based thin-film transistors (TFTs) impede its development to realize industrial production for replacing Si-TFTs. In this work, we fabricated a high performance MgZnO/ZnO dual-active-layer TFTs (DAL-TFTs) through systematic optimize the synthesis conditions. The optimized Mg0.2Zn0.8O/ZnO TFTs presents high mobility of 21.1 cm2V−1s−1 with a high Ion/off of 1.5 × 108, which is much higher than that of ZnO-based TFTs. The results indicate that high carrier concentration ZnO close to the insulation layer ensures the excellent mobility of MgZnO/ZnO DAL-TFTs and low carrier concentration MgZnO layer can reduce the off-state current of the device, and increase the switching ratio of the device. Our results indicate the MgZnO/ZnO composite is a promising candidate for high performance TFTs and other electronic devices. [Display omitted] •High performance MgZnO/ZnO-based TFT was successfully fabricated.•The optimized Mg0.2Zn0.8O/ZnO TFT shows high mobility of 21.1 cm2V−1s−1.•The optimized Mg0.2Zn0.8O/ZnO TFT presents high Ion/off of 1.5 × 108.