Details

Autor(en) / Beteiligte

• Kim, Ji-Young
• Lee, Jongsoo
• Kim, Kiryong
• Moon, Byoung Mo
• Jung, Seong-Ook

Titel

A 0.166 pJ/b/pF, 3.5–5 Gb/s TSV I/O Interface With V OH Drift Control

Ist Teil von

• IEEE transactions on circuits and systems. II, Express briefs, 2021-06, Vol.68 (6), p.1822-1826

Ort / Verlag

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

Erscheinungsjahr

2021

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A voltage-mode transmitter (TX) with a predriver and a receiver (RX) with an energy-efficient level shifter (LS) is proposed to reduce power consumption in the heavy load of a through-silicon via (TSV) input–output (I/O) interface. An N-over-N (NN) driver with the proposed predriver reduces [Formula Omitted] drift to enhance jitter characteristics. In addition, the swing level of the transmitted signal can be lowered to 600 mV with a single supply voltage at the TX. To recover the swing level, the RX is designed with the proposed LS that can operate with a data rate of 5 Gb/s. An 8-stacked TSV is emulated in the 65 nm CMOS process, and the emulated capacitance of each stack is 100 fF. The energy efficiency is 0.166 pJ/b/pF with a pseudorandom binary sequence (PRBS)-7 at 5 Gb/s and 0.205 pJ/b/pF with a PRBS-31 at 3.5 Gb/s.