Details

Autor(en) / Beteiligte

• Nawar, Ahmed M.
• Yahia, I.S.
• Al-Kotb, M.S.

Titel

Stretchable memory loops and photovoltaic characteristics of organic-inorganic solid-state iron (III) chloride tetraphenyl porphyrin /p-Si(111) nanostructure devices

Ist Teil von

• Sensors and actuators. A. Physical., 2021-02, Vol.318, p.112511, Article 112511

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The configuration of the fabricated Ag/FeTPPCl/p-Si/Al device, and the picked-up SEM micrograph declares that; the annealed FeTPPCl thin films at 350 ᵒC have a nanostructured decorated surface. The Current-Voltage (I–V) characteristic curves for the fabricated Ag/FeTPPCl/p-Si/Al device. The inset displays the characteristic (R-V) curve under reverse-forward (-8 to 5 V) and forward-reverse (-8 to 5 V) biasing directions. [Display omitted] •Fabrication multimodal Ag/FeTPPCl/p-Si/Al electronic device.•Effect of different backward biasing Voltage on the area of the memory loop.•The photo-response and photovoltaic characteristics of FeTPPCl/p-Si heterostructures were investigated and analyzed at different backward biasing voltage under singular power of illumination.•Movable backward biasing voltage to storing data.•Shunt resistances get secure controlling properties. Iron (III) chloride tetraphenyl porphyrin (FeTPPCl) nanostructure decorated films were grown by thermal evaporation Technique (Edward-306) on p-type Silicon (111)/Al. The picked-up micrographs from the scan electron microscopy (SEM) declared that; the annealed FeTPPCl thin films at 350 ᵒC have a nanostructured decorated surface. An impedance spectrum of the Ag/FeTPPCl/p-Si/Al device is analyzed according to the Series Layer Model (SLM) as LRse[R1C1][R2C2] electrical equivalent circuit. The (Re(Z)-(-Im(Z))) complex-plane of Ag/FeTPPCl/p-Si/Al device is characterized by two composed semicircles with series resistance and induction behavior at higher frequencies. These results may be useful in Organic/Inorganic non-volatile memory scalable devices dependant on the electro‐resistive behavior. There are anomalies recorded types of cyclic (I–V) characteristic curves for the manufactured devices at different backward biasing voltages (under dark condition and illumination at room temperature). The power conversion efficiency (PCE) is 5.73 % at the power of the incident light intensity (Pin = 80 mW/cm2), whereas the projected area of the top electrode ∼ 73.6 × 10−3 cm2. The ideality parameter was larger than unity and the estimated barrier height is 0.46 eV. The series Rs and shunt Rsh resistances are characterized under different backward biasing voltage Vrev = {-2, -3, -4, -6−8, and -10 V} and a constant forward biasing voltage 5 V. When the backward voltage was stretched toward lower voltages (-4, -6, -8 and -10 V), Rsh is decreased as following: Rsh = 4.62, 4.73, 4.78, and 4.87 kΩ, respectively. The maximum values of the change in current (ΔIm) and resistance (ΔRm) are estimated and modulated, mathematically, corresponding to its backward biasing voltages. These results may be supporting utilizing this device in current and resistance electrical switching dependent backward biasing voltage application.