Details

Autor(en) / Beteiligte

• Dubey, Avashesh
• Narang, Rakhi
• Saxena, Manoj
• Gupta, Mridula

Titel

Total ionizing dose effects in junctionless accumulation mode MOSFET

Ist Teil von

• Applied physics. A, Materials science & processing, 2021-03, Vol.127 (3), Article 189

Ort / Verlag

Berlin/Heidelberg: Springer Berlin Heidelberg

Erscheinungsjahr

2021

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this paper, an extensive investigation of low-frequency (1/ f ) noise and total ionizing dose–response of junctionless accumulation mode double-gate (JAM DG) MOSFET is presented. Current–voltage ( I d – V g ) characteristics and low-frequency noise of JAM DG MOSFET are simulated at different ionized doses and compared to different gate oxide thickness and different channel doping concentrations. A significant amount of irradiation-induced threshold voltage shift and increase in low-frequency noise is observed for different gate oxide thickness and channel doping concentration. Moreover, the irradiation-induced border trap densities are also obtained at different doses. The gamma radiation model of Sentaurus TCAD is used to get the required results.