Details

Autor(en) / Beteiligte

• Gullu, H.H.
• Isik, M.
• Gasanly, N.M.
• Parlak, M.

Titel

Temperature-dependent optical characteristics of sputtered Ga-doped ZnO thin films

Ist Teil von

• Materials science & engineering. B, Solid-state materials for advanced technology, 2021-01, Vol.263, p.114834, Article 114834

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• •Ga-doped ZnO thin film layer was deposited by magnetron sputtering technique.•Derivative spectroscopy analysis was used to calculate band gap energies.•Temperature-band gap energy dependency was analyzed.•Urbach energy was determined from absorption analysis. The present paper reports structural and optical properties of gallium (Ga) doped ZnO thin films (GZO) grown by magnetron sputtering technique. The crystalline properties were determined from X-ray diffraction measurements and analyses pointed out the crystalline structure as hexagonal, crystalline size as 43 nm and strain as 6.9 × 10−5. Derivative spectroscopy analyses showed that band gap energy of GZO thin films decreases from 3.50 eV (10 K) to 3.45 eV (300 K). Temperature-band gap energy dependency was analyzed using Varshni and O’Donnell-Chen models. The absolute zero band gap energy, the rate of change of band gap energy with temperature and phonon energy were found as 3.50 eV, −2.8 × 10−4 eV/K and 15 meV, respectively. The room temperature band gap and Urbach energies were also determined as 3.43 eV and 102 meV, respectively, from the absorption analysis.