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Low voltage drop tunnel junctions grown monolithically by MOCVD
Ist Teil von
Applied physics letters, 2021-02, Vol.118 (5)
Ort / Verlag
Melville: American Institute of Physics
Erscheinungsjahr
2021
Quelle
AIP Scitation Journals Complete
Beschreibungen/Notizen
Tunnel junction devices grown monolithically by metal organic chemical vapor deposition were optimized for minimization of the tunnel junction voltage drop. Two device structures were studied: an all-GaN homojunction tunnel junction and a graded InGaN heterojunction-based tunnel junction. This work reports a record-low voltage drop in the graded-InGaN heterojunction based tunnel junction device structure achieving a de-embedded tunnel junction voltage drop of 0.17 V at 100 A/cm2. The experimental data were compared with a theoretical model developed through technology computer-aided design (TCAD) simulations that offer a physics-based approach to understanding the key components of the design space, which lead to a more efficient tunnel junction.