Details

Autor(en) / Beteiligte

• Steiner, Myles A.
• France, Ryan M.
• Buencuerpo, Jeronimo
• Geisz, John F.
• Nielsen, Michael P.
• Pusch, Andreas
• Olavarria, Waldo J.
• Young, Michelle
• Ekins‐Daukes, Nicholas J.

Titel

High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain‐Balanced GaInAs/GaAsP Quantum Wells

Ist Teil von

• Advanced energy materials, 2021-01, Vol.11 (4), p.n/a

Ort / Verlag

Weinheim: Wiley Subscription Services, Inc

Erscheinungsjahr

2021

Quelle

Wiley Online Library All Journals

Beschreibungen/Notizen

• High‐efficiency solar cells are essential for high‐density terrestrial applications, as well as space and potentially vehicle applications. The optimum bandgap for the terrestrial spectrum lies beyond the absorption range of a traditional dual junction GaInP/GaAs cell, with the bottom GaAs cell having higher bandgap energy than necessary. Lower energy bandgaps can be achieved with multiple quantum wells (QWs), but such a pathway requires advanced management of the epitaxial growth conditions in order to be useful. Strain‐balanced GaAsP/GaInAs QWs are incorporated into a single junction GaAs solar cell and a dual junction GaInP/GaAs solar cell, leading to 27.2% efficiency in the single junction device and a one‐sun record 32.9% efficiency in the tandem device. Good carrier collection and low non‐radiative recombination are observed in the cells with up to 80 QWs. The GaAs cells employ a rear‐heterojunction architecture to boost the open‐circuit voltage to over 1.04 V in the quantum well device, despite the large number of QWs. Strain‐balanced GaAsP/GaInAs quantum wells are incorporated into GaAs and GaInP/GaAs solar cells, with high material quality and low non‐radiative recombination. The GaAs single junction cells demonstrate 27.2% efficiency, and the GaInP/GaAs tandem solar cells demonstrate a one‐sun record 32.9% efficiency.