Details

Autor(en) / Beteiligte

• Singh, Chetan C.
• Choudhury, Aditya N. Roy
• Sutar, D. S.
• Sarkar, Shaibal K.

Titel

Novel plasma-assisted combustion route for NiOx thin film deposition

Ist Teil von

• Journal of materials science. Materials in electronics, 2020-11, Vol.31 (22), p.19836-19845

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The emerging field of flexible electronics demands low-temperature, high-throughput solution-processable thin films of oxide semiconductors. Towards this goal, we report a novel low-temperature synthesis route that is primarily in a combination of solution combustion synthesis and plasma irradiation to deposit  p -type nonstoichiometric NiO x thin films at a relatively lower temperature range. The film morphology was studied by atomic force microscope (AFM) and scanning electron microscope (SEM) while the crystallographic information was obtained from X-ray diffraction (XRD) studies. The NiO x formation mechanism is extensively studied with X-ray photoelectron spectroscopy (XPS) measurements. Here we reveal the conditional analysis to optimize the Ni 3+ concentration that essentially controls the net free carrier in the nonstoichiometric NiO thin films. Based on our understanding, the plasma treatment not only plays a deterministic role in the material and the defect formation but is also efficient in removal of chemical impurity to obtain crystalline NiO thin films. Temperature-dependent (130–303 K) electrical resistivity measurements revealed that variable-range hopping (VRH) is the dominant hole transport process in this material.