Details

Autor(en) / Beteiligte

• Nukala, Pavan
• Wei, Yingfen
• de Haas, Vincent
• Guo, Qikai
• Antoja-Lleonart, Jordi
• Noheda, Beatriz

Titel

Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

Ist Teil von

• Ferroelectrics, 2020-12, Vol.569 (1), p.148-163

Ort / Verlag

Philadelphia: Taylor & Francis

Erscheinungsjahr

2020

Quelle

Taylor & Francis Journals Auto-Holdings Collection

Beschreibungen/Notizen

• The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca2 1 ) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO 4 (HZO) films grown on (001) SrTiO 3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading toward identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si).