Details

Autor(en) / Beteiligte

• Yang, Quanxin
• Lyu, Tu
• Li, Zhenming
• Mi, Hongxing
• Dong, Yuan
• Zheng, Haotian
• Sun, Zhuoya
• Feng, Wenzhi
• Xu, Guiying

Titel

Realizing widespread resonance effects to enhance thermoelectric performance of SnTe

Ist Teil von

• Journal of alloys and compounds, 2021-01, Vol.852, p.156989, Article 156989

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2021

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• The resonance effect has been used as a theoretical strategy in enhancing the thermoelectric performance. However, its origin and mechanisms are still ambiguous, which complicates the rapid screening of resonance dopants and thereby hinders the improvement of the thermoelectric performance. In this work, we attempt to disclose the mechanism of resonance effect and propose a straightforward method to screen the resonance dopants suitable for SnTe. Hence, two triggering conditions of achieve the resonance effect are proposed. One is the energy correlation between impurity and host states. The other is the position correlation between impurity state level and Fermi level. Based on the two conditions, a variety of elements (including Y, Ru, In, Sb, La, Gd, Lu, Os, Tl and Bi) are selected as the potential resonance dopants suitable for SnTe. Among these elements, we herein re-study the effect of Bi doping on the thermoelectric performance of SnTe. Consequently, a maximum PF of ∼32.46μWcm−1K−2 and the optimal ZT of ∼1.23 were achieved in Sn0·94Bi0·04Te at 873 K due to a high Seebeck coefficient and low thermal conductivity after Bi doping. •The mechanism of RE was disclosed and two triggering conditions were proposed.•A straightforward method for selecting effective resonance dopants was put forward based on the two conditions.•The elements Y, Ru, In, Sb, La, Gd, Lu, Os, Tl and Bi were screened as effective resonance dopants for SnTe.•The power factors after Bi doping were significantly improved due to Bi induced RE (from ∼20.86 to ∼34.46 μWcm−1K−2).•The value of ZT was enhanced over ∼100% than pristine SnTe to ∼1.23 at 873 K via Bi doping.