Details

Autor(en) / Beteiligte

• Shengurov, V.G.
• Denisov, S.A.
• Yu. Chalkov, V.
• Filatov, D.O.
• Kudrin, A.V.
• Sychyov, S.M.
• Trushin, V.N.
• Zaitsev, A.V.
• Titova, A.M.
• Alyabina, N.A.

Titel

Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition

Ist Teil von

• Materials science & engineering. B, Solid-state materials for advanced technology, 2020-09, Vol.259, p.114579, Article 114579

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We report on growing the p-Ge:Ga/Si(0 0 1) epitaxial layers by hot wire chemical vapor deposition using a solid Ge:Ga sublimation source of Ga. The Ge:Ga layers grown using this doping method were featured by a high crystal quality and full electrical activation of the Ga impurity. The results of the present study demonstrate the prospects of application of the sublimation Ga source for growing the Ge:Ga layers in the Ge/Si(0 0 1) device structures for Si-based electronics and photonics.