Details

Autor(en) / Beteiligte

• Chikalova-Luzina, O. P.
• Vyatkin, V. M.
• Shcherbakov, I. P.
• Aleshin, A. N.

Titel

Electroluminescence Mechanism in Light Emitting Field Effect Transistors Based on Perovskite Nanocrystal Films in a Semiconductor Polymer Matrix

Ist Teil von

• Physics of the solid state, 2020-08, Vol.62 (8), p.1500-1505

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• — The mechanisms of radiative recombination and electroluminescence in the structures based on the films of perovskite nanocrystals CsPbBr 3 in the matrix of a semiconductor polymer MEH-PPV have been considered. It has been shown that two mechanisms determine the electroluminescence intensity in light-emitting field-effect transistors with active layers based on the MEH-PPV films:CsPbBr 3 (nanocrystals): recombination of the charged carriers injected into the polymer matrix and recombination at the interface polymer/perovskite nanocrystals. The results of theoretical and experimental studies have shown that the superlinear dependence of the electroluminescence intensity on the level of electrical excitation in the light-emitting field-effect transistors based on MEH-PPV:CsPbBr 3 (nanocrystals) is due to the mechanism of electron tunneling through a potential barrier at the electrode.