Details

Autor(en) / Beteiligte

• Li, Chang
• Xie, Liu
• He, Tao
• Zhang, Yan
• Dong, Zhuo
• Yang, Zeyuan
• Zhang, Xiaodong
• Wang, Zhongchang
• Zhang, Kai

Titel

Electrically Stimulated Band Alignment Transit in Black Phosphorus/β-Ga2O3 Heterostructure Dual-band Photodetector

Ist Teil von

• Chemical research in Chinese universities, 2020-08, Vol.36 (4), p.703-708

Ort / Verlag

Changchun: Jilin University and The Editorial Department of Chemical Research in Chinese Universities

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In recent decades, dual-band photodetectors have received widespread attention due to better target identification, which are considered as the development trend of next generation photodetectors. However, the traditional dual-band photodetectors based on heteroepitaxial growth, superlattice and multiple quantum well structures are limited by complex fabrication process and low integration. Herein, we report a UV/IR dual-band photodetector by integrating ultra-wide gap β -Ga 2 O 3 and narrow-gap black phosphorous(BP) nanoflakes. A vertical van der Waals (vdW) heterostructure is formed between BP and β -Ga 2 O 3 by mechanically exfoliated method integrated without the requirement of lattice match. The heterostructure devices show excellent rectification characteristics with high rectifying ratio of ca. 10 6 and low reverse current around pA. Moreover, the device displays obvious photoresponse under UV and IR irradiations with responsivities of 0.87 and 2.15 mA/W, respectively. We also explore the band alignment transit within the heterostructure photodetector at different bias voltages. This work paves the way for fabricating novel dual-band photodetectors by utilizing 2D materials.