Details

Autor(en) / Beteiligte

• Sahin, Yilmaz
• Kacus, Hatice
• Aydogan, Sakir
• Yilmaz, Mehmet
• Incekara, Umit

Titel

Enhanced Electrical and Optical Characteristics of Co/Phenol Red (PR)/Silicon Hybrid Heterojunction for Photodiode and Thermal Applications

Ist Teil von

• Journal of electronic materials, 2020-08, Vol.49 (8), p.4952-4961

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2020

Quelle

SpringerNature Journals

Beschreibungen/Notizen

• A Co/phenol red (PR)/ n -Si/Al device has been fabricated and its current–voltage ( I – V ) characteristics measured between 80 K and 460 K. Junction parameters of the device, such as the ideality factor, barrier height, interface state density, and series resistance ( R s ), were determined using standard thermionic emission theory, the Cheung function, and the Norde method. The application of these approaches revealed that n varied between 4.66 and 1.70 in the temperature range of 80 K to 460 K, while Φ b varied between 0.24 eV and 0.83 eV in the same temperature range. These variations of n and Φ b can be attributed to the barrier height inhomogeneity in the device. Although PR is generally used in biological applications such as cell culture, it has been observed that such Co/phenol red/ n -Si/Al devices may be critical candidates for use in thermal sensors and photodiode applications due to their photoresponse and low-temperature operation for reverse-bias I – V measurements. Furthermore, PR is an alternative to semiconductor materials commonly used in such applications.