Details

Autor(en) / Beteiligte

• Boubaaya, Mohamed
• O'Sullivan, B. J.
• Djezzar, Boualem
• Franco, J.
• Litta, E. D.
• Ritzenthaler, R.
• Dupuy, E.
• Machkaoutsan, Vladimir
• Fazan, Pierre
• Kim, C.
• Bennaceur-Doumaz, D.
• Hamida, A. Ferhat
• Spessot, A.
• Linten, D.
• Horiguchi, N.

Titel

Impact of Dimensions of Memory Periphery FinFETs on Bias Temperature Instability

Ist Teil von

• IEEE transactions on device and materials reliability, 2020-06, Vol.20 (2), p.269-277

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2020

Quelle

IEL

Beschreibungen/Notizen

• Fin height and width dependence of negative and positive Bias Temperature Instability (N/PBTI) on logic for memory high-<inline-formula> <tex-math notation="LaTeX">\kappa </tex-math></inline-formula> metal gate (HKMG) FinFET transistors is reported for the first time. It was observed that NBTI degradation is less severe when increasing the physical height of the silicon fin. The increased fin height results in a lower effective defect density, believed to be related to a reduced role of the defective fin corners and/or top surface. In addition, activation energies for the capture process in tall fins during NBTI stress show lower values while charge trapping in standard height fins is highly temperature dependent. PBTI results reveal a similar, albeit less severe, impact of fin height, suggesting an impact of fin height on the high-<inline-formula> <tex-math notation="LaTeX">\kappa </tex-math></inline-formula> layer, with again an increased defectivity at the fin corners and/or top surface, whose effective role is reduced in the case of taller fin. On the other hand, PBTI shows limited temperature dependence, independent of fin height.