Details

Autor(en) / Beteiligte

• Wang, Bingbing
• Wang, Xiaodong
• Chen, Yulu
• Yang, Xiong
• Tong, Wulin
• Zhang, Chuansheng
• Chen, Xiaoyao
• Pan, Ming
• Cao, Juncheng

Titel

Study on the fabrication process and photoelectric performances of si-based blocked-impurity-band detector

Ist Teil von

• Optical and quantum electronics, 2020-05, Vol.52 (5), Article 272

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2020

Quelle

Springer Online Journals

Beschreibungen/Notizen

• The structural model and fabrication process of the Si-based blocked-impurity-band (BIB) detector were proposed. The numerical simulation of phosphorus ion implantation and rapid thermal annealing was investigated. Various implantation conditions were analyzed to meet the requirements of good electrical contact. Moreover, the carrier activation effect of phosphorus ion implantation and rapid thermal annealing was demonstrated by Hall test. Then the relationship between blackbody responsivity and annealing temperature was analyzed. According to the measurement results, the blackbody responsivity and response wavelength range of Si-based BIB detector we fabricated can reach 2.2A/W and 5–45 μm, respectively. Our work shows that the good electrical contact can improve the blackbody responsivity. It provides an effective method to fabricate Si-based BIB detector with good performances.