Details

Autor(en) / Beteiligte

• Huynh, Thi Bich Hao
• Chu, Duc Thanh
• Hoang, Van Hoan
• Nguyen, Thi Thu Hien
• Duong, Thanh Tung
• Tran, Van Anh
• Pham, Thanh Huy
• Nguyen, Duy Cuong

Titel

Synthesis of Gallium-Doped Zinc Oxide (GZO) Nanoparticles for GZO/Silver Nanowire Nanocomposite Transparent Conductive Electrodes

Ist Teil von

• Journal of electronic materials, 2020-06, Vol.49 (6), p.3964-3971

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Gallium (Ga)-doped zinc oxide nanoparticles (GZO-NPs) have been synthesized using a heating-up method. The Ga doping concentration strongly affected the particle size, distribution, and bandgap energy of the GZO-NPs. When the Ga concentration was increased from 0% to 5%, the average size of the GZO-NPs decreased from 57 nm to 16 nm while the bandgap increased from 3.14 eV to 3.26 eV. On further increase of the Ga content to 7% and 9%, the particle size increased while the bandgap narrowed. The GZO-NPs synthesized with 5% Ga showed the best uniformity and smallest average diameter of approximately 16 nm. The GZO-NPs with 5% Ga were applied to reduce the mechanical contact between the AgNWs in GZO/silver nanowire (AgNW) composite for application as a transparent conductive electrode, yielding R SH  = 18.1 Ω/□, T  = 77.8% at 550 nm, and σ DC / σ Op  = 77.53. These results indicate that such GZO-NPs are a very promising nanocrystalline ink precursor for printing thin films for application in nanocomposite transparent conductive electrodes.