Details

Autor(en) / Beteiligte

• Asadchikov, V. E.
• Blagov, A. E.
• Butashin, A. V.
• Volkov, Yu. O.
• Deryabin, A. N.
• Kanevskii, V. M.
• Muslimov, A. E.
• Protsenko, A. I.
• Roshchin, B. S.
• Targonskii, A. V.
• Chukhovskii, F. N.

Titel

Lateral Inhomogeneities of Sapphire Plates Determined with the Aid of X-Ray and Probe Methods

Ist Teil von

• Technical physics, 2020-03, Vol.65 (3), p.400-406

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• X-ray diffractometry, X-ray profilometry, atomic-force microscopy, and sclerometer tests are employed in the study of R -cut plates of sapphire single crystals grown with the aid of the Kyropoulos technique and used as substrates for the silicon-on-sapphire structures. Regions with different degrees of perfection can be found even on a single plate. Mutually consistent results of the four experimental methods based on different physical principles can be used to reveal regions of structural imperfection on the surface of a plate. It is expedient to employ a complex procedure for multipoint monitoring of the parameters of plates to reduce the number of defect samples that serve as substrates in the production of electronic devices.