Details

Autor(en) / Beteiligte

• Gao, Fei
• Wang, Jian‐Huan
• Watzinger, Hannes
• Hu, Hao
• Rančić, Marko J.
• Zhang, Jie‐Yin
• Wang, Ting
• Yao, Yuan
• Wang, Gui‐Lei
• Kukučka, Josip
• Vukušić, Lada
• Kloeffel, Christoph
• Loss, Daniel
• Liu, Feng
• Katsaros, Georgios
• Zhang, Jian‐Jun

Titel

Nanowires: Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020)

Ist Teil von

• Advanced materials (Weinheim), 2020-04, Vol.32 (16), p.n/a

Ort / Verlag

Weinheim: Wiley Subscription Services, Inc

Erscheinungsjahr

2020

Quelle

Wiley Online Library All Journals

Beschreibungen/Notizen

• The first wafer‐scale growth of site‐controlled Ge/Si nanowires is reported by Georgios Katsaros, Jian‐Jun Zhang, and co‐workers in article number 1906523. They are highly uniform and their position, distance, length, and even square‐ or L‐shaped structures can all be precisely controlled. The electrically tunable spin‐orbit coupling demonstrated by transport measurements and the charge sensing between quantum dots in closely spaced wires open a path toward scalable qubit devices using nanowires on silicon.