Details

Autor(en) / Beteiligte

• Kanahashi, Kaito
• Tanaka, Naoki
• Shoji, Yoshiaki
• Maruyama, Mina
• Jeon, Il
• Kawahara, Kenji
• Ishihara, Masatou
• Hasegawa, Masataka
• Ohta, Hiromichi
• Ago, Hiroki
• Matsuo, Yutaka
• Okada, Susumu
• Fukushima, Takanori
• Takenobu, Taishi

Titel

Formation of environmentally stable hole-doped graphene films with instantaneous and high-density carrier doping via a boron-based oxidant

Ist Teil von

• NPJ 2D materials and applications, 2019-02, Vol.3 (1), Article 7

Ort / Verlag

London: Nature Publishing Group UK

Erscheinungsjahr

2019

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• Large-area graphene films have substantial potential for use as next-generation electrodes because of their good chemical stability, high flexibility, excellent carrier mobility, and lightweight structure. However, various issues remain unsolved. In particular, high-density carrier doping within a short time by a simple method, and air stability of doped graphene films, are highly desirable. Here, we demonstrate a solution-based high-density (>10 14  cm −2 ) hole doping approach that promises to push the performance limit of graphene films. The reaction of graphene films with a tetrakis(pentafluorophenyl)borate salt, containing a two-coordinate boron cation, achieves doping within an extremely short time (4 s), and the doped graphene films are air stable for at least 31 days. X-ray photoelectron spectroscopy reveals that the graphene films are covered by the chemically stable anions, resulting in an improved stability in air. Moreover, the doping reduces the transmittance by only 0.44 ± 0.23%. The simplicity of the doping process offers a viable route to the large-scale production of functional graphene electrodes. Doped graphene: borate salt provides efficient hole doping Highly transparent, hole-doped graphene films can be obtained using molecular dopants based on borate salts in solution. A team led by Taishi Takenobu at Waseda University and Nagoya University demonstrated a solution-based approach to dope graphene with high carrier density. Graphene samples synthesized by chemical vapor deposition were immersed in a saturated o-dichlorobenzene solution of Mes2B+[(C6F5)4B]−, a tetrakis(pentafluorophenyl)borate salt containing a two-coordinate boron cation, Mes2B+, and a counter anion, [(C6F5)4B]−. After rinsing with an organic solvent and annealing, a high hole density of 2.5 × 1014 cm−2 was achieved within 4 seconds. The conduction behavior was stable for at least 31 days in air without a substantial change in resistance, and only a minor reduction of 0.44% in the film transmittance was observed.