Details

Autor(en) / Beteiligte

• Mikhaylov, A. I.
• Afanasyev, A. V.
• Ilyin, V. A.
• Luchinin, V. V.
• Reshanov, S. A.
• Schöner, A.

Titel

High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.122-126

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2020

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A method for reducing the on-state resistance of a high-power 4 H -SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p -region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved.