Details

Autor(en) / Beteiligte

• Ye, Xinli
• Chen, Zhaofeng
• Li, Min
• Wang, Ting
• Wu, Cao
• Zhang, Junxiong
• Zhou, Qianbo
• Liu, Hezhou
• Cui, Sheng

Titel

Hollow SiC foam with a double interconnected network for superior microwave absorption ability

Ist Teil von

• Journal of alloys and compounds, 2020-03, Vol.817, p.153276, Article 153276

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• For high-efficiency microwave absorber, it is wise to integrate the porous structure and SiC material. In this work, the hollow SiC foam with a double interconnected network is proposed via a simple chemical vapor deposition and direct oxidation process. The SiC film imparts the foam with excellent mechanical property and microwave absorption performance. As a result, the fabricated SiC foam possesses a superior compressive response of 1.409 MPa at 17.51% strain, which is much higher than the original C foam or SiC reinforced C foam. Besides, SiC foam shows a minimum reflection loss value of −50.75 dB at 4.85 mm at 6.00 GHz. The effective bandwidth frequency and electromagnetic absorption efficiency also prove the superiority of the hollow porous architecture at the specified thickness, followed by a simple interpretation of the microwave absorbing mechanism. Given the excellent characteristics, the SiC foam has the enormous applied potential as a lightweight absorber in complex microwave absorbing conditions, especially for high temperature applications. [Display omitted] •We introduced a simple method to prepare the hollow SiC foam with a double interconnected network.•The fabricated SiC foam possesses a superior compressive response of 1.409 MPa at 17.51 % strain.•The SiC foam shows a minimum reflection loss value of −50.75 dB at 4.85 mm at 6.00 GHz.•The electromagnetic absorption efficiency proves the superiority of the SiC foam.•The SiC foam has the enormous applied potential as a lightweight absorber in complex conditions.