Details

Autor(en) / Beteiligte

• El Radaf, I. M.

Titel

Structural, optoelectrical, linear, and nonlinear optical characterizations of the Cu2ZnGeSe4 thin films

Ist Teil von

• Journal of materials science. Materials in electronics, 2020-02, Vol.31 (4), p.3228-3237

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2020

Link zum Volltext

Quelle

SpringerLink (Online service)

Beschreibungen/Notizen

• Good quality copper zinc germanium selenide (Cu 2 ZnGeSe 4 ) thin films were grown via thermal evaporation procedure with different thicknesses (261, 379, and 486 nm). The analysis of the X-ray diffraction examination of the Cu 2 ZnGeSe 4 thin films demonstrates that the as-deposited Cu 2 ZnGeSe 4 thin films are polycrystalline with a single-phase tetragonal structure. The elemental composition analysis of the evaporated Cu 2 ZnGeSe 4 thin film established that the as-deposited film is near stoichiometric in the compound. The optical study on the Cu 2 ZnGeSe 4 thin films displayed that the Cu 2 ZnGeSe 4 films exhibited a direct allowed optical transition and by increasing the thickness the magnitudes of the direct bandgap were decreased from 1.47 to 1.31 eV while the Urbach energy increased. The effect of thickness on the skin depth δ , absorption coefficient , linear refractive index n , and the static refractive index n o of the Cu 2 ZnGeSe 4 thin films was studied. The analysis of the nonlinear optical parameters of the Cu 2 ZnGeSe 4 thin films reveals the increase of the film thickness combined with increase in the nonlinear refractive index.