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Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth
Ist Teil von
Journal of crystal growth, 2019-12, Vol.527, p.125248, Article 125248
Ort / Verlag
Amsterdam: Elsevier B.V
Erscheinungsjahr
2019
Link zum Volltext
Quelle
Elsevier ScienceDirect Journals Complete
Beschreibungen/Notizen
•Study on the growth process of large (4-in.) SiC ingot by TSSG.•Analysis of the relationship between fluid flow and interfacial stability.•The reason why large SiC crystals are difficult to grow in TSSG.
The interface instability in large-size silicon carbide solution growth has been investigated with a focus on the influence of silicon solution convection. Indications have shown that solution convection produces a substantial effect on the instability of the growth interface. As the SiC size increases, the instability becomes more evident. Therefore, improved solution convection is required for growing large-sized silicon carbide ingots by the solution method.