Details

Autor(en) / Beteiligte

• Yu-jie, Zhang
• Wen-Jie, Wang
• Ding-bang, Zhou
• Xu, Jian-Ping
• Gong-tang, Wang
• Li, Lan

Titel

Influence of Coulomb interaction effect on the electrical transport forfew-layered PtSe2 films

Ist Teil von

• Journal of applied physics, 2019-12, Vol.126 (23)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2019

Quelle

Scitation (American Institute of Physics)

Beschreibungen/Notizen

• The Coulomb effect is a particularly significant topic in quasi-two-dimensional systems.Here, we carried out comprehensive measurements of electrical transport properties offewer-layer PtSe2 films with and withoutantidot arrays. For as-grown PtSe2 films, the sheetconductance σ□ varies linearly withthe logarithm of temperature at low temperature, which can be well described by theAltshuler and Aronov electron-electron interaction (EEI) effect, and then the result wasfurther quantitatively confirmed by the ratios of a relative change of the Hallcoefficient ΔRH/RH to that of sheetresistance ΔR□/R□. While after millingof antidot arrays the PtSe2 film possessesinhomogeneous structure, it still presents metallic transport behavior. The overall σ□ and RH characteristics can beexplained by the current EEI theories in granular metals. Our results not only reveal thefundamental physics of PtSe2 films, but also providepowerful experimental evidence for the presence of the Coulomb EEI effect in the family oftransition metal dichalcogenides. This work presents the subtle change of charge transportproperties by introducing antidot arrays, which may be of benefit in improving sensitivityand stability of nanoscale electronic devices.