Details

Autor(en) / Beteiligte

• Sedov, V.S.
• Martyanov, A.K.
• Khomich, A.A.
• Savin, S.S.
• Voronov, V.V.
• Khmelnitskiy, R.A.
• Bolshakov, A.P.
• Ralchenko, V.G.

Titel

Co-deposition of diamond and β-SiC by microwave plasma CVD in H2-CH4-SiH4 gas mixtures

Ist Teil von

• Diamond and related materials, 2019-10, Vol.98, p.107520, Article 107520

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2019

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The co-deposition of diamond and silicon carbide (SiC) was realized in a microwave plasma using H2-CH4-SiH4 mixtures at enhanced microwave power density of up to 150 W/cm3, and SiC/diamond composite films on (100) Si substrates were produced. The growth parameters were selected to ensure almost equal deposition rates of ~0.3 μm/h for both phases. Composite films were formed either directly on Si surface, or on a buffer (nucleation) layer of SiC or diamond, preliminary deposited on the Si substrate. The film structure has been characterized by SEM, XRD, Raman and PL spectroscopy. It was confirmed that the silicon carbide phase in the composite is the cubic polytype β-SiC (3C-SiC) with the presence of only a small fraction of the hexagonal polytype, while the diamond is in well-faceted microcrystalline form. Diamond grains are Si-doped as was evidenced by the strong photoluminescence of silicon-vacancy color centers. Also, minor inclusions of amorphous sp2 carbon and of trans-polyacetylene (t-PA) were detected in the β-SiC phase. The overall crystalline quality of the composite is high, as evidenced by narrow Raman peaks both for diamond and β-SiC. Our results show, that with an appropriate choice of growth parameters, particularly SiH4/CH4 ratio, high-quality films of Si-doped diamond, silicon carbide, SiC-diamond composite, and combinations of these structures can be synthesized in a single process. The co-deposition of diamond and SiC was realized by microwave plasma CVD using H2-CH4-SiH4 mixtures at enhanced microwave power density; β-SiC/diamond composite films were produced with high crystalline quality on (100) Si substrates. [Display omitted] •Co-deposition of diamond and cubic SiC by microwave plasma CVD in H2-CH4-SiH4 mixtures•SiC-diamond composite films are grown on (100) Si substrates.•Micro-Raman mapping of SiC and diamond spatial distribution in the films•The composite deposition on a buffer layer of pure SiC or pure diamond