Details

Autor(en) / Beteiligte

• Manzoor, Samiya
• Husain, Shahid
• Somvanshi, Anand
• Fatema, Mehroosh
• Zarrin, Naima

Titel

Impurity induced dielectric relaxor behavior in Zn doped LaFeO3

Ist Teil von

• Journal of materials science. Materials in electronics, 2019-11, Vol.30 (21), p.19227-19238

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2019

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Sol–gel derived nanocrystalline samples of LaFe 1−x Zn x O 3 have been investigated for their dielectric properties in the broad frequency and temperature range. The pristine sample exhibits an anomaly around Néel temperature in the variation of dielectric permittivity against temperature. However, the loss factor shows frequency dependent peak indicating the relaxational behavior in the LaFeO 3 system. The incorporation of Zn enhances the relaxational behavior in the pristine system. A.C. conductivity is determined for all the samples in the temperature range 300–600 K. Activation energy determined in the high-temperature range (500–600 K) may correspond to the motion of singly ionized oxygen vacancies, in the vicinity of 450–500 K corresponds to the motion of doubly ionized oxygen vacancies within the single FeO 6 octahedra and in the lower temperature range (300–450 K) it may correspond to hopping of electrons between Fe 2+ and Fe 3+ ions. The hopping conduction mechanism has been investigated from the temperature dependence of the “s” parameter. The conduction mechanism in pristine sample is governed by the correlated barrier hopping (CBH) model. However, in doped samples, the conduction mechanism follows both CBH and non-overlapping small polaron tunneling (NSPT) models.