Details

Autor(en) / Beteiligte

• Chen, Kuan-Ting
• Lo, Chieh
• Chen, Pin-Guang
• Liao, M.-H.
• Li, Kai-Shin
• Chang, Shu-Tong
• Lee, Min-Hung
• Gu, Siang-Sheng
• Wang, Zheng-Ying
• Liao, Chun-Yu
• Chou, Yu-Chen
• Hong, Ruo-Chun
• Chen, Shih-Yao
• Chen, Hong-Yu
• Siang, Gao-Yu

Titel

Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Ist Teil von

• IEEE journal of the Electron Devices Society, 2018, Vol.6, p.900-904

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2018

Quelle

Free E-Journal (出版社公開部分のみ）

Beschreibungen/Notizen

• Ferroelectric-Hf 1-x Zr x O 2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (V T -shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<;60 mV/dec) is extended from ~2.5 (bulk-Si) decades to ~3.5 decades SOI. Reverse-drain-induced barrier lowering and negative differential resistance are confirmed at subthreshold region and weak inversion region, respectively.