Details

Autor(en) / Beteiligte

• Emelyanov, A.V.
• Nikiruy, K.E.
• Demin, V.A.
• Rylkov, V.V.
• Belov, A.I.
• Korolev, D.S.
• Gryaznov, E.G.
• Pavlov, D.A.
• Gorshkov, O.N.
• Mikhaylov, A.N.
• Dimitrakis, P.

Titel

Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications

Ist Teil von

• Microelectronic engineering, 2019-07, Vol.215, p.110988, Article 110988

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2019

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• An array of cross-point memristive devices has been implemented on the basis of yttria-stabilized zirconia thin film for applications in prototypes of spiking neural networks. The resistive switching phenomena and the plasticity nature of such memristive devices are studied. Reproducible bipolar resistive switching and precise tuning of resistive state are demonstrated and used to implement the plasticity rule according to STDP (spike-timing-dependent plasticity) mechanism. STDP learning is found to be dependent on the memristor's initial resistive state value and discussed in terms of the finite conductance change in studied structures. Obtained results provide the foundation for autonomous neuromorphic circuits with unsupervised learning development. [Display omitted] •An array of YSZ based cross-point memristors has been implemented for neuromorphic applications.•Resistive switching phenomenon and plasticity nature of YSZ based memristors are studied.•Spike-timing-dependent plasticity is shown to occur in the YSZ based memristors.