Details

Autor(en) / Beteiligte

• Tong, Jinchao
• Tobing, Landobasa Y. M.
• Qian, Li
• Suo, Fei
• Zhang, Dao Hua

Titel

InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

Ist Teil von

• Journal of materials science, 2018-09, Vol.53 (18), p.13010-13017

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2018

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We present the design, fabrication, and characterization of middle-wavelength infrared photodetector based on active InAs 0.9 Sb 0.1 -based hetero- p - i - n structure grown on GaSb substrate. In this structure, the active absorption layer is sandwiched between thin quaternary p -type and n -type AlInAsSb layers and a heavily doped AlGaSb layer is introduced to reduce dark current. We observed good lattice matching between GaSb substrates and epitaxial layers by high-resolution X-ray diffraction. Photoluminescence (PL) spectrum at 13 K shows a full width at half maximum of ~ 29 meV, demonstrating good quality active absorption layers. The band gap energy of InAs 0.9 Sb 0.1 is derived as ~ 0.322 eV at 0 K by Varshni fitting from PL spectra at different temperatures. A rather flat room-temperature responsivity of ~ 0.8–0.9 AW −1 over a wavelength range of ~ 2.1 µm is demonstrated without antireflection coating. A detectivity of 8.9 × 10 8  cm Hz 1/2  W −1 at 3.5 µm for room-temperature operation is achieved under applied bias of − 0.5 V.