Details

Autor(en) / Beteiligte

• Yang, Dandan
• Li, Xiaoming
• Wu, Ye
• Wei, Changting
• Qin, Zhengyuan
• Zhang, Chunfeng
• Sun, Zhiguo
• Li, Yuelei
• Wang, Yue
• Zeng, Haibo

Titel

Surface Halogen Compensation for Robust Performance Enhancements of CsPbX3 Perovskite Quantum Dots

Ist Teil von

• Advanced optical materials, 2019-06, Vol.7 (11), p.n/a

Ort / Verlag

Weinheim: Wiley Subscription Services, Inc

Erscheinungsjahr

2019

Quelle

Wiley Online Library

Beschreibungen/Notizen

• Understanding the subtle structure–property relationships of quantum dots (QDs) is essential for targeted modulation of optoelectronic properties, and the influences of surface defects of inorganic halide perovskite (HP) QDs are still not very clear. Here, the negative exciton trapping effects of surface halide vacancies (VX) on the photoluminescence quantum yield QY (PLQY) of HPQDs are determined by a detailed analysis of the optical parameters, exciton dynamics, and surface chemical states. Based on the fact that VX contribute greatly to nonradiative recombination processes, versatile in situ and postpassivation strategies are developed by constructing intact Pb–X octahedrons. High QYs for standard red CsPbBr1I2 (85%), green CsPbBr3 (96%), and blue CsPbBr1.3Cl1.7 (92%) emissions are achieved. The superiorities of the reduced VX are further demonstrated by high external quantum efficiency of 0.8% and a stable emission wavelength of the blue light‐emitting diodes. This study deepens the understanding of HPQDs and demonstrates the potential for the artificial control of the optical properties of HPQDs. Surface halide vacancy (VX) defects in halide perovskite quantum dots are found to make great contributions to the nonradiative recombination processes, so that reducing the surface VX density is favorable for improving optical properties. Therefore, specific in situ and postpassivation strategies by constructing intact Pb–X octahedrons are developed to reduce the surface VX and enhance the quantum yield.