Details

Autor(en) / Beteiligte

• Dutta Gupta, Sayak
• Soni, Ankit
• Joshi, Vipin
• Kumar, Jeevesh
• Sengupta, Rudrarup
• Khand, Heena
• Shankar, Bhawani
• Mohan, Nagaboopathy
• Raghavan, Srinivasan
• Bhat, Navakanta
• Shrivastava, Mayank

Titel

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

Ist Teil von

• IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2544-2550

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2019

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper, for the first time, we have experimentally demonstrated enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type high-<inline-formula> <tex-math notation="LaTeX">\kappa {\mathrm {Al}}_{x}{\mathrm {Ti}}_{1-x} </tex-math></inline-formula>O based gate stack. Concentration of Al in Al-Ti-O system was found to be a tuning parameter for the threshold voltage of GaN HEMTs. The high-<inline-formula> <tex-math notation="LaTeX">\kappa </tex-math></inline-formula> properties of <inline-formula> <tex-math notation="LaTeX">{\mathrm {Al}}_{x}{\mathrm {Ti}}_{1-x} </tex-math></inline-formula>O as a function of Al % are studied. Superiority of AlTiO over other p-oxides such as CuO and NiO x is proven statistically. Using the high-<inline-formula> <tex-math notation="LaTeX">\kappa </tex-math></inline-formula> and p-type AlTiO, in conjunction with a thinner AlGaN barrier under gate, 600-V e-mode GaN HEMTs are demonstrated with superior ON-state performance (<inline-formula> <tex-math notation="LaTeX">\text{I}_{ \mathrm{\scriptscriptstyle ON}}~\sim ~400 </tex-math></inline-formula> mA/mm and <inline-formula> <tex-math notation="LaTeX">\text{R}_{ \mathrm{\scriptscriptstyle ON}} ={8.9}\,\,\Omega </tex-math></inline-formula>-mm) and gate control over channel (<inline-formula> <tex-math notation="LaTeX">\text{I}_{ \mathrm{\scriptscriptstyle ON}}/\text{I}_{ \mathrm{\scriptscriptstyle OFF}} = {10}^{{7}} </tex-math></inline-formula>, SS = 73 mV/dec, and gate leakage <200 nA/mm), beside improved safe operating area reliability.