Details

Autor(en) / Beteiligte

• Alcañiz, A.
• López, G.
• Martín, I.
• Jiménez, A.
• Datas, A.
• Calle, E.
• Ros, E.
• Gerling, L.G.
• Voz, C.
• del Cañizo, C.
• Alcubilla, R.

Titel

Germanium photovoltaic cells with MoOx hole-selective contacts

Ist Teil von

• Solar energy, 2019-03, Vol.181, p.357-360

Ort / Verlag

New York: Elsevier Ltd

Erscheinungsjahr

2019

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• •We report the first Germanium PV cell formed by a MoOx/n-Ge heterojunction.•Photocurrent density is 44.8 mA/cm2, comparable to that of conventional Ge PV cells.•Open circuit voltage is 138 mV, lower than that of conventional Ge PV cells.•Tunneling mechanisms through the MoOx/Ge interface may explain the small Voc. Very thin, thermally evaporated MoOx (x < 3) layer has been used as transparent hole-selective contact on an n-type Germanium substrate to effectively demonstrate PV conversion capability. The fabricated MoOx/Ge heterojunction PV cell shows a photocurrent density of 44.8 mA/cm2 under AM1.5G illumination, which is comparable to that of conventional Ge PV cells. However, a low open-circuit voltage of 138 mV is obtained, which might be explained by the presence of tunnelling mechanisms through the MoOx/Ge interface. To our knowledge, this is the first demonstration of a hole-selective contact made of transition metal oxide on an n-type semiconductor different from c-Si. Thus, this work may have important implications toward the development of new device architectures, such as novel low-cost Ge PV cells with possible applications in multijunction solar cells and thermophotovoltaics.