Details

Autor(en) / Beteiligte

• Terborg, Ralf
• Kaeppel, Andi
• Yu, Baojun
• Patzschke, Max
• Salge, Tobias
• Falke, Meiken

Titel

Advanced Chemical Analysis Using an Annular Four-Channel Silicon Drift Detector

Ist Teil von

• Microscopy today, 2017-03, Vol.25 (2), p.30-35

Ort / Verlag

New York, USA: Cambridge University Press

Erscheinungsjahr

2017

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The detector is inserted horizontally and placed like a backscattered electron (BSE) detector between sample and pole piece. [...]the annular active SDD area resides directly above and very close to the sample, achieving both a high take-off angle between 40° and 70°, which minimizes shadowing effects, and a relatively large solid angle of collection. To avoid alteration of X-ray spectroscopy results by electrons coming from the sample and to maintain low-energy X-ray sensitivity, three polymer windows of different thickness can be placed semiautomatically in front of the chip depending on the acceleration voltage used. Because this annular SDD array is closer to the specimen, the solid angle value is 100 times higher than that typically available in a 10 mm² detector with a 35° takeoff angle and over 10 times higher than that available from two 30 mm2 detectors or a single 100 mm2 detector in conventional setups. Beam skirting means that the spatial resolution of analysis is degraded by beam broadening because of collisions of probe electrons with gas molecules, atoms, and ions. [...]low probe current under high vacuum conditions is desired. [...]a porous TiO2 structure decorated with Au nanoparticles or nanorods is a promising composite material for orthopedic and dental implants [12].