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In this work, the influence of annealed ITO thin film as a transparent electrode layer in pulse laser deposition (PLD) Cu2ZnSnS4 (CZTS) thin-film solar cell was investigated. The proposed annealed ITO thin film exhibits a high degree of crystallinity and large and evenly distributed grains. Thus, low resistivity and wide and high transmitted band in the UV/VIS light range with ideal optical band gap of 3.8 eV can be obtained. Devices built with these annealed ITO thin films on our PLD CZTS solar cell exhibit a significant improvement in power conversion efficiency from 0.2% to 1.92%.
•The proposed annealed ITO thin film can be obtained with high crystalline•The lower resistivity and ideal optical band gap of 3.8 eV can be obtained.•The prototype devices of distinct photovoltaic affect and efficiency increase to 1.92% after annealed.