Details

Autor(en) / Beteiligte

• Wei, Jie
• Luo, Xiaorong
• Deng, Gaoqiang
• Sun, Tao
• Wang, Chenxia
• Zhu, Kunfeng
• Cui, Wei
• Wang, Zhikuan
• Li, Zhaoji
• Zhang, Bo

Titel

Ultrafast and Low-Turn-OFF Loss Lateral IEGT With a MOS-Controlled Shorted Anode

Ist Teil von

• IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.533-538

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2019

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• A novel ultrafast and low-loss lateral injection-enhanced gate transistor (LIEGT) is proposed and investigated by simulation. The device features a MOS-controlled shorted anode (MCSA) and a bias voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{{AG}} </tex-math></inline-formula>) applied between the anode trench gate (ATG) and the anode electrode. The n+ anode is shorted to the N-buffer through the MOS channel around the ATG when the MCSA is activated with <inline-formula> <tex-math notation="LaTeX">{V}_{{AG}} > {V}_{{th}} </tex-math></inline-formula> during turn-off and blocking states, and thus the p+ anode/N-buffer junction is unactivated. The MCSA LIEGT turns off as fast as a unipolar device by optimizing the time gap to activate the MCSA before turning off the cathode trench gate (CTG). The activated MCSA would deactivate hole injection from the anode side and synchronously quickly extract the electrons from the N-drift, which improves the switching speed and dramatically decreases the turn-off energy loss (<inline-formula> <tex-math notation="LaTeX">{E}_{ \mathrm{\scriptscriptstyle OFF}} </tex-math></inline-formula>). In the blocking state, the MCSA LIEGT achieves a MOS breakdown mode instead of an open base p-n-p bipolar breakdown mode. Thus, the breakdown voltage (BV) is not only improved but also independent of the p+ anode doping concentration. In the forward conduction state with <inline-formula> <tex-math notation="LaTeX">{V}_{{AG}} = {0} </tex-math></inline-formula>, the MCSA is unactivated and hence the MCSA LIEGT operates like a conventional LIEGT without deteriorating the on-state voltage drop (<inline-formula> <tex-math notation="LaTeX">{V}_{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula>). Compared with the conventional LIEGT, the proposed device decreases <inline-formula> <tex-math notation="LaTeX">{E}_{ \mathrm{\scriptscriptstyle OFF}} </tex-math></inline-formula> by 88% and improves the BV by 13% at the same <inline-formula> <tex-math notation="LaTeX">{V}_{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula>. Importantly, <inline-formula> <tex-math notation="LaTeX">{E}_{ \mathrm{\scriptscriptstyle OFF}} </tex-math></inline-formula> is almost independent of <inline-formula> <tex-math notation="LaTeX">{V}_{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula>.