Details

Autor(en) / Beteiligte

• Pacilè, D.
• Eremeev, S. V.
• Caputo, M.
• Pisarra, M.
• De Luca, O.
• Grimaldi, I.
• Fujii, J.
• Aliev, Z. S.
• Babanly, M. B.
• Vobornik, I.
• Agostino, R. G.
• Goldoni, A.
• Chulkov, E. V.
• Papagno, M.

Titel

Deep Insight Into the Electronic Structure of Ternary Topological Insulators: A Comparative Study of PbBi4Te7 and PbBi6Te10

Ist Teil von

• Physica status solidi. PSS-RRL. Rapid research letters, 2018-12, Vol.12 (12), p.n/a

Ort / Verlag

Berlin: WILEY?VCH Verlag Berlin GmbH

Erscheinungsjahr

2018

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• By means of angle‐resolved photoemission spectroscopy measurements, the electronic band structure of the three‐dimensional PbBi4Te7 and PbBi6Te10 topological insulators is compared. The measurements clearly reveal coexisting topological and multiple Rashba‐like split states close to the Fermi level for both systems. The observed topological states derive from different surface terminations, as confirmed by scanning tunneling microscopy measurements, and are well‐described by the density functional theory simulations. Both the topological and the Rashba‐like states reveal a prevalent two‐dimensional character barely affected by air exposure. X‐ray and valence band photoemission measurements suggest Rashba‐like states stem from the van der Waals gap expansion, consistently with density functional theory calculations. By means of angle‐resolved photoemission spectroscopy measurements the authors compare the electronic band structure of three‐dimensional PbBi4Te7 and PbBi6Te10 topological insulators. The measurements clearly reveal coexisting topological and multiple Rashba‐like split states close to the Fermi level for both systems. The observed topological states derive from different surface terminations, as confirmed by scanning tunneling microscopy measurements, and are well‐described by density functional theory simulations.