Details

Autor(en) / Beteiligte

• Liu, Dongyan
• Hong, Jinhua
• Wang, Xiao
• Li, Xiaobo
• Feng, Qingliang
• Tan, Congwei
• Zhai, Tianyou
• Ding, Feng
• Peng, Hailin
• Xu, Hua

Titel

Diverse Atomically Sharp Interfaces and Linear Dichroism of 1T' ReS2‐ReSe2 Lateral p–n Heterojunctions

Ist Teil von

• Advanced functional materials, 2018-11, Vol.28 (47), p.n/a

Ort / Verlag

Hoboken: Wiley Subscription Services, Inc

Erscheinungsjahr

2018

Quelle

Wiley-Blackwell Full Collection

Beschreibungen/Notizen

• Creating heterojunctions between different 2D transition‐metal dichalcogenides (TMDs) would enable on‐demand tuning of electronic and optoelectronic properties in this new class of materials. However, the studies to date are mainly focused on hexagonal (2H) structure TMD‐based heterojunctions, and little attention is paid on the distorted octahedral (1T') structure TMD‐based heterojunctions. This study reports the large‐scale synthesis of monolayer 1T' ReS2‐ReSe2 lateral heterojunction with domain size up to 100 µm by using two‐step epitaxial growth. Atomic‐resolution scanning transmission electron microscopy reveals high crystal quality of the heterojunction with atomically sharp interfaces. Interestingly, three types of epitaxial growth modes accompanying formation of three different interface structures are revealed in the growth of 1T' heterojunction, where the angle between the b‐axis of ReS2 and ReSe2 is 0°, 120°, and 180°, respectively. The 0° and 180° interface structures are both found to be more abundant than the 120° interface structure owing to their relative lower formation energy. Electrical transport demonstrates that the as‐grown heterostructure forms lateral p–n junction with intrinsic rectification characteristics and exhibits polarization‐dependent photodiode properties. This is the first time the linear dichroism is achieved in 2D lateral heterostructure, which is important for the development of new devices with multi‐functionality. 2D distorted octahedral (1T') ReS2‐ReSe2 lateral heterojunctions with atomically sharp interfaces are synthesized by using two‐step epitaxial growth. Diverse interface structures and polarization‐sensitive photodiode properties are achieved in the 1T' heterojunctions, which open up new prospects for transition‐metal dichalcogenides in building multi‐functional electronic and optoelectronic devices.