Details

Autor(en) / Beteiligte

• Atuchin, V. V.
• Lebedev, M. S.
• Korolkov, I. V.
• Kruchinin, V. N.
• Maksimovskii, E. A.
• Trubin, S. V.

Titel

Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method

Ist Teil von

• Journal of materials science. Materials in electronics, 2019-01, Vol.30 (1), p.812-823

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2019

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The optical quality Hf x Ti 1−x O 2 films with a wide range of the Hf/Ti ratio were prepared on Si (100) substrates by the ALD method with the use of tetrakis(ethylmethylamido)hafnium(IV) (Hf(NC 2 H 5 CH 3 ) 4 , TEMAH) and titanium(IV) chloride TiCl 4 as Hf and Ti precursors, respectively. The H 2 O vapor was applied as oxygen source. The structural properties of the as-deposited and annealed films were evaluated by the XRD analysis. The Hf/Ti ratio in the films was measured by energy dispersive spectroscopy and X-ray photoelectron spectroscopy. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of E  = 1.12–4.96 eV. The specific growth kinetics is observed for 0 < x < 1. The optical constants wide-range tuning is reached in the Hf x Ti 1−x O 2 (x = 0–1) films via the chemical composition variation and annealing.