Details

Autor(en) / Beteiligte

• Arita, Makoto
• Torigoe, Kazuhisa
• Yamauchi, Takashi
• Nagaoka, Takashi
• Aiso, Toru
• Yamashita, Yasuhisa
• Motooka, Teruaki

Titel

Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy

Ist Teil von

• Applied physics letters, 2014-03, Vol.104 (13)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Quelle

American Institute of Physics

Beschreibungen/Notizen

• The workfunction change in doped Si was examined using Kelvin force microscopy in a wide range of doping concentrations from p-type ∼1019 to n-type ∼1020 cm−3 corresponding to the bulk Fermi-level positions from near the valence-band top to conduction-band minimum. Experimental data can be reproduced by model calculations using an appropriate surface-state density composed of the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band bending occurs for doping concentrations less than ∼1014 cm−3 while the bending becomes prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration increases to ∼1020 cm−3.