Details

Autor(en) / Beteiligte

• Mikhailova, M. P.
• Ivanov, E. V.
• Danilov, L. V.
• Petukhov, A. A.
• Kalinina, K. V.
• Slobozhanyuk, S. I.
• Zegrya, G. G.
• Stoyanov, N. D.
• Yakovlev, Yu. P.
• Hospodková, A.
• Pangrác, J.
• Oswald, J.
• Zíková, M.
• Hulicius, E.

Titel

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Ist Teil von

• Journal of applied physics, 2014-06, Vol.115 (22)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Quelle

American Institute of Physics

Beschreibungen/Notizen

• We report on superlinear electroluminescent structures based on AlSb/InAs1−xSbx/AlSb deep quantum wells grown by MOVPE on n-GaSb:Te substrates. Dependence of the electroluminescence (EL) spectra and optical power on the drive current in nanoheterostructures with AlSb/InAs1−xSbx/AlSb quantum well at 77–300 K temperature range was studied. Intensive two-band superlinear EL in the 0.5–0.8 eV photon energy range was observed. Optical power enhancement with the increasing drive current at room temperature is caused by the contribution of the additional electron-hole pairs due to the impact ionization by the electrons heated at the high energy difference between AlSb and the first electron level Ee1 in the InAsSb QW. Study of the EL temperature dependence at 90–300 K range enabled us to define the role of the first and second heavy hole levels in the radiative recombination process. It was shown that with the temperature decrease, the relation between the energies of the valence band offset and the second heavy hole energy level changes due to the temperature transformation of the energy band diagram. That is the reason why the EL spectrum revealed radiative transitions from the first electron level Ee1 to the first hole level Eh1 in the whole temperature range (90–300 K), while the emission band related with the transitions to the second hole level occurred only at T > 200 K. Comparative examination of the nanostructures with high band offsets and different interface types (AlAs-like and InSb-like) reveals more intense EL and optical power enhancement at room temperature in the case of AlAs-like interface that could be explained by the better quality of the heterointerface and more efficient hole localization.