Details

Autor(en) / Beteiligte

• Gao, S.
• Chen, C.
• Zhai, Z.
• Liu, H. Y.
• Lin, Y. S.
• Li, S. Z.
• Lu, S. H.
• Wang, G. Y.
• Song, C.
• Zeng, F.
• Pan, F.

Titel

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

Ist Teil von

• Applied physics letters, 2014-08, Vol.105 (6)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The Ag/SiO2/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ∼102, satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of <100 ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO2/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.