Details

Autor(en) / Beteiligte

• Naik, V. B.
• Meng, H.
• Xiao, J. X.
• Liu, R. S.
• Kumar, A.
• Zeng, K. Y.
• Luo, P.
• Yap, S.

Titel

Effect of electric-field on the perpendicular magnetic anisotropy and strain properties in CoFeB/MgO magnetic tunnel junctions

Ist Teil von

• Applied physics letters, 2014-08, Vol.105 (5)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• In this article, we investigate the effect of electric-field on the perpendicular magnetic anisotropy (PMA) and strain properties in nanoscaled CoFeB/MgO magnetic tunnel junction using tunnel magnetoresistance and piezoresponse force microscopy (PFM) measurements, respectively. We show that while the PMA change under electric-field is consistent with the previous reports, the PFM data show that the applied electric-field induces strain in a nanoscaled MgO. We demonstrate that the development of compressive and tensile strains corresponding to different polarities of applied electric-field. We discuss the interplay between the electric-field controlled PMA and strain properties. Our results may accelerate the development of magnetoelectrically controlled spintronic devices for low-power and high-density magnetic data storage applications.