Details

Autor(en) / Beteiligte

• Sukrittanon, S.
• Kuang, Y. J.
• Dobrovolsky, A.
• Kang, Won-Mo
• Jang, Ja-Soon
• Kim, Bong-Joong
• Chen, W. M.
• Buyanova, I. A.
• Tu, C. W.

Titel

Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Ist Teil von

• Applied physics letters, 2014-08, Vol.105 (7)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• We have demonstrated self-catalyzed GaNxP1−x and GaNxP1−x/GaNyP1−y core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaNxP1−x nanowires was observed to be comparable to that of GaP nanowires (∼585 °C to ∼615 °C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the [111] growth direction in GaNxP1−x nanowires. A temperature-dependent photoluminescence (PL) study performed on GaNxP1−x/GaNyP1−y core/shell nanowires exhibited an S-shape dependence of the PL peaks. This suggests that at low temperature, the emission stems from N-related localized states below the conduction band edge in the shell, while at high temperature, the emission stems from band-to-band transition in the shell as well as recombination in the GaNxP1−x core.