Details

Autor(en) / Beteiligte

• Zhang, H. Z.
• Ang, D. S.
• Gu, C. J.
• Yew, K. S.
• Wang, X. P.
• Lo, G. Q.

Titel

Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

Ist Teil von

• Applied physics letters, 2014-12, Vol.105 (22)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfOx layer. In the TiN/HfOx/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfOx layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfOx/IL/TiN device.