Details

Autor(en) / Beteiligte

• Shimizu, Takao
• Yokouchi, Tatsuhiko
• Oikawa, Takahiro
• Shiraishi, Takahisa
• Kiguchi, Takanori
• Akama, Akihiro
• Konno, Toyohiko J.
• Gruverman, Alexei
• Funakubo, Hiroshi

Titel

Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

Ist Teil von

• Applied physics letters, 2015-03, Vol.106 (11)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2015

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• The ferroelectric properties of the (Hf0.5Zr0.5)O2 films on Pt/Ti/SiO2/Si substrate are investigated. It is found that the films crystallized by annealing in O2 and N2 atmospheres have similar crystal structures as well as remanent polarization and coercive fields. Weak temperature and frequency dependences of the ferroelectric properties indicate that the hysteretic behavior in HfO2-based films originates not from the mobile defects but rather from the lattice ionic displacement, as is the case of the typical ferroelectric materials.