Details

Autor(en) / Beteiligte

• He, Xinfeng
• Xu, Jing
• Xu, Xiaofeng
• Gu, Congcong
• Chen, Fei
• Wu, Binhe
• Wang, Chunrui
• Xing, Huaizhong
• Chen, Xiaoshuang
• Chu, Junhao

Titel

Negative capacitance switching via VO2 band gap engineering driven by electric field

Ist Teil von

• Applied physics letters, 2015-03, Vol.106 (9)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2015

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO2 layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO2 band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO2 can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.